e u r o p e a n p o w e r - s e m i c o n d u c t o r a n d e l e c t r o n i c s c o m p a n y v w k a p r . 1 9 9 7 m a r k e t i n g i n f o r m a t i o n f z 8 0 0 r 1 6 k f 4 m 8 m 4 6 1 , 5 1 8 1 3 0 3 1 , 5 2 8 7 1 6 , 5 1 8 , 5 c e c e e g c 2 , 5 1 1 4 s c r e w i n g d e p t h m a x . 8 e x t e r n a l c o n n e c t i o n ( t o b e d o n e ) e x t e r n a l c o n n e c t i o n ( t o b e d o n e ) c e g e c e c
igbt-module fz 800 r 16 kf4 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1600 v kollektor-dauergleichstrom dc-collector current i c 800 a periodischer kollektor spitzenstrom repetitive peak collector current t p =1 ms i crm 1600 a gesamt-verlustleistung total power dissipation t c =25c, transistor /transistor p tot 6250 w gate-emitter-spitzenspannung gate-emitter peak voltage v ge 20 v dauergleichstrom dc forward current i f 800 a periodischer spitzenstrom repetitive peak forw. current t p =1ms i frm 1600 a isolations-prfspannung insulation test voltage rms, f=50 hz, t= 1 min. v isol 3,4 kv charakteristische werte / characteristic values: transistor min. typ. max. kollektor-emitter s?ttigungsspannung collector-emitter saturation voltage i c =800a, v ge =15v, t vj =25c v ce sat - 3,3 3,7 v i c =800a, v ge =15v, t vj =125c - 4,4 4,8 v gate-schwellenspannung gate threshold voltage i c =65ma, v ce =v ge , t vj =25c v ge(to) 4,5 5,5 6,5 v eingangskapazit?t input capacity f o =1mhz,t vj =25c,v ce =25v, v ge =0v c ies - 130 - nf kollektor-emitter reststrom collector-emitter cut-off current v ce =1600v, v ge =0v, t vj =25c i ces - 6 - ma v ce =1600v, v ge =0v, t vj =125c - 60 - ma gate-emitter reststrom gate leakage current v ce =0v, v ge =20v, t vj =25c i ges - - 400 na emitter-gate reststrom gate leakage current v ce =0v, v eg =20v, t vj =25c i egs - - 400 na einschaltzeit (induktive last) turn-on time (inductive load) i c =800a,v ce =900v,v l =15v t on v l =15v, r g =2,4 w , t vj =25c - 0,8 - s v l =15v, r g =2,4 w , t vj =125c - 1 - s speicherzeit (induktive last) storage time (inductive load) i c =800a,v ce =900v,v l =15v t s v l =15v, r g =2,4 w , t vj =25c - 1,1 - s v l =15v, r g =2,4 w , t vj =125c - 1,3 - s fallzeit (induktive last) fall time (inductive load) i c =800a,v ce =900v,v l =15v t f v l =15v, r g =2,4 w , t vj =25c - 0,25 - s v l =15v, r g =2,4 w , t vj =125c - 0,3 - s charakteristische werte / characteristic values transistor / transistor einschaltverlustenergie pro puls turn-on energy loss per pulse i c =800a,v ce =900v,v l =15v e on r g =2,4 w , t vj =125c, l s =70nh - 340 - mws abschaltverlustenergie pro puls turn-off energy loss per pulse i c =800a,v ce =900v,v l =15v e off r g =2,4 w , t vj =125c, l s =70nh - 180 - mws inversdiode / inverse diode durchla?spannung forward voltage i f =800a, v ge =0v, t vj =25c v f - 2,4 2,8 v i f =800a, v ge =0v, t vj =125c - 2,2 - v rckstromspitze peak reverse recovery current i f =800a, -di f /dt=4,5ka/s i rm v rm =900v, v eg =10v, t vj =25c - 540 - a v rm =900v, v eg =10v, t vj =125c - 660 - a sperrverz?gerungsladung recovered charge i f =800a, -di f /dt=4,5ka/s q r v rm =900v, v eg =10v, t vj =25c - 100 - as v rm =900v, v eg =10v, t vj =125c - 220 - as thermische eigenschaften / thermal properties innerer w?rmewiderstand thermal resistance, junction to case transistor / transistor, dc r thjc 0,02 c/w diode /diode, dc 0,05 c/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro module / per module r thck 0,01 c/w h?chstzul. sperrschichttemperatur max. junction temperature t vj max 150 c betriebstemperatur operating temperature t c op -40...+125 c lagertemperatur storage temperature t stg -40...+125 c mechanische eigenschaften / mechanical properties innere isolation internal insulation al 2 o 3 anzugsdrehmoment f. mech. befestigung / mounting torque terminals m6 / tolerance 10% m1 3 nm anzugsdrehmoment f. elektr. anschlsse / terminal connection torque terminals m4 / tolerance +5/-10% m2 2 nm terminals m8 8...10 nm gewicht weight g ca. 1500 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. bedingung fr den kurzschlu?schutz / conditions for short-circuit protection t fg = 10 s v cc = 1000 v v l = 15v v cem = 1300 v r gf = r gr = 2,4 w i cmk1 ? 8000 a t vj = 125c i cmk2 ? 6000 a unabh?ngig davon gilt bei abweichenden bedingungen / with regard to other conditions v cem = v ces - 15nh x |di c /dt|
f z 8 0 0 r 1 6 k f 4 f z 8 0 0 r 1 6 k f 4 / 1 i c [ a ] 1 6 0 0 1 4 0 0 1 2 0 0 1 0 0 0 8 0 0 6 0 0 4 0 0 2 0 0 0 v c e [ v ] 1 2 3 4 5 f z 8 0 0 r 1 6 k f 4 / 2 i c [ a ] v c e [ v ] 1 4 0 0 1 2 0 0 1 0 0 0 8 0 0 6 0 0 4 0 0 2 0 0 0 1 2 3 4 5 1 5 v v g e = 2 0 v 1 2 v 1 0 v 8 v 9 v f z 8 0 0 r 1 6 k f 4 / 4 i c [ a ] 2 0 0 0 1 5 0 0 1 0 0 0 5 0 0 0 v c e [ v ] 0 5 0 0 1 0 0 0 1 5 0 0 2 0 0 0 f z 8 0 0 r 1 6 k f 4 / 3 i c [ a ] 1 6 0 0 1 4 0 0 1 2 0 0 1 0 0 0 8 0 0 6 0 0 4 0 0 2 0 0 0 v g e [ v ] 5 6 7 8 9 1 0 1 1 1 2 2 5 c 1 2 5 c t v j = b i l d / f i g . 4 r c k w ? r t s - a r b e i t s b e r e i c h / r e v e r s e b i a s e d s a f e o p e r a t i n g a r e a t v j = 1 2 5 c v l f = v l r = 1 5 v r g = 2 , 4 w b i l d / f i g . 3 b e r t r a g u n g s c h a r a k t e r i s t i k ( t y p i s c h ) / t r a n s f e r c h a r a c t e r i s t i c ( t y p i c a l ) v c e = 2 0 v b i l d / f i g . 2 k o l l e k t o r - e m i t t e r - s p a n n u n g i m s ? t t i g u n g s b e r e i c h ( t y p i s c h ) / c o l l e c t o r - e m i t t e r - v o l t a g e i n s a t u r a t i o n r e g i o n ( t y p i c a l ) t v j = 1 2 5 c b i l d / f i g . 1 k o l l e k t o r - e m i t t e r - s p a n n u n g i m s ? t t i g u n g s b e r e i c h ( t y p i s c h ) / c o l l e c t o r - e m i t t e r - v o l t a g e i n s a t u r a t i o n r e g i o n ( t y p i c a l ) v g e = 1 5 v t v j = 2 5 c t v j = 1 2 5 c
f z 8 0 0 r 1 6 k f 4 f z 8 0 0 r 1 6 k f 4 / 5 z ( t h ) j c [ c / w ] t [ s ] 2 3 4 5 7 2 3 4 5 7 2 3 4 5 7 2 3 4 5 7 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 i g b t d i o d e 2 3 4 5 7 1 0 - 1 1 0 - 2 1 0 - 3 2 3 7 f z 8 0 0 r 1 6 k f 4 / 6 i f [ a ] 1 6 0 0 1 4 0 0 1 2 0 0 1 0 0 0 8 0 0 6 0 0 4 0 0 2 0 0 0 v f [ v ] 0 0 , 5 1 1 , 5 2 2 , 5 3 3 , 5 b i l d / f i g . 6 d u r c h l a ? k e n n l i n i e d e r i n v e r s d i o d e ( t y p i s c h ) / f o r w a r d c h a r a c t e r i s t i c o f t h e i n v e r s e d i o d e ( t y p i c a l ) t v j = 2 5 c t v j = 1 2 5 c b i l d / f i g . 5 t r a n s i e n t e r i n n e r e r w ? r m e w i d e r s t a n d ( d c ) / t r a n s i e n t t h e r m a l i m p e d a n c e ( d c )
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